Highly-Sensitive Ultra-Violet Photoemission Yield Spectroscopy

/

Team Members: Rawa Shalata, Saleh Abdalrhmn

Supervisors / Mentors: Dr. Igal Levine

 

Semiconductor devices are extremely sensitive to defects, especially deep-level or low-density states within the bandgap. These defects can severely degrade device performance. However, existing techniques, like He-I UPS, are limited in their sensitivity and unable to detect such defects in early research stages.To overcome this, we aim to build a system based on Constant Final State Yield Spectroscopy (CFSYS), offering up to 5 orders of magnitude higher sensitivity.