Defects Detection of Silicon Wafers by X-Ray Scattering

xray-scattering

Members: Roba Barham, Tarek Badran

Supervisor: Prof. Uri Raviv

The manufacturing of semiconductors, which form the foundation of modern technology, is advancing rapidly, with components becoming increasingly smaller and more complex. As the size of these elements continues to shrink, precise methods for detecting defects are essential. X-rays with a wavelength of 0.15 nm, in grazing incident (very low) angles can be used to scan semiconductor chips and effectively capturing detailed scattering patterns, covering a larger surface area. Grazing Incidence Small Angle X-ray Scattering (GISAXS) offers high precision, enabling the detection of increasingly smaller details (with nm resolution). However, high repeatability and assurance are necessary to make this method perfectly suitable for detecting defects in silicon wafers. A crucial aspect missing in previous studies is a key that provides higher repeatability and precision to ensure the method's optimal functionality. Here, we present our idea for improving the setup: motorizing the system with smaller steps in each axis, rotating at smaller angles, ensuring precise chip repositioning. This enhancement is complemented by a high-resolution camera capturing the position and a robust algorithm for analyzing chip scans and image positioning.